Biographical Notes

Kinam Kim

Kinam Kim received Ph.D. degree in electrical engineering from the University of California Los Angeles, CA. in 1994. In 1983 he joined Samsung Electronics Co., Ltd., where he has been involved in the development of various memory technologies (64Kb to 4Giga-bit densities for DRAM, 2Gb to 32Gb and beyond for NAND Flash, and etc.). He was responsible for the research and development of next generation memory technologies for DRAM, Non-volatile memory, SRAM, and emerging new memories such as FRAM, PRAM, and MRAM as well as next generation CMOS image sensor. Currently he is an executive vice president and he is the head of the department of DRAM/SRAM product and technology. He published more than 400 technical papers and applies and holds more than 130 patents related to memory technology. He is a recipient of ISI’s citation award for highly cited paper. He is a member of Strategic Planning Committee for MOCIE (Ministry of Commerce, Industry, and Energy) initiated Next generation semiconductor business. He is an IEEE fellow and a Samsung fellow.